4 Inch Silicon Carbide Wafer Epitaxial Wafer Boat

Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Epitaxial Wafer Boat has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

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Semicorex 4 Inch Silicon Carbide Wafer Epitaxial Wafer Boat, the perfect solution for wafer processing in semiconductor manufacturing. Our 4 Inch Silicon Carbide Wafer Epitaxial Wafer Boats are made from high-quality silicon carbide (SiC) ceramic that provides superior resistance to high temperatures and chemical corrosion.
Our silicon carbide 4 Inch Silicon Carbide Wafer Epitaxial Wafer Boat has a smooth surface that minimizes particle generation, ensuring the highest level of purity for your products. With excellent thermal conductivity and superior mechanical strength, our boats provide consistent and reliable results.
Our 4 Inch Silicon Carbide Wafer Epitaxial Wafer Boats are compatible with all standard wafer processing equipment and can withstand temperatures up to 1600°C. They are easy to handle and clean, making them a cost-effective and efficient choice for your manufacturing needs.
Our team of experts is committed to providing the best quality and service. We offer custom designs to meet your specific requirements, and our products are backed by our quality assurance program.

Parameters of 4 Inch Silicon Carbide Wafer Epitaxial Wafer Boat

Technical Properties
Index	Unit	Value
Material Name		Reaction Sintered Silicon Carbide	Pressureless Sintered Silicon Carbide	Recrystallized Silicon Carbide
Composition		RBSiC	SSiC	R-SiC
Bulk Density	g/cm3	3	3.15 ± 0.03	2.60-2.70
Flexural Strength	MPa (kpsi)	338(49)	380(55)	80-90 (20°C) 90-100(1400°C)
Compressive Strength	MPa (kpsi)	1120(158)	3970(560)	> 600
Hardness	Knoop	2700	2800	/
Breaking Tenacity	MPa m1/2	4.5	4	/
Thermal Conductivity	W/m.k	95	120	23
Coefficient of Thermal Expansion	10^-6.1/°C	5	4	4.7
Specific Heat	Joule/g 0k	0.8	0.67	/
Max temperature in air	℃	1200	1500	1600
Elastic Modulus	Gpa	360	410	240

The difference between SSiC and RBSiC:

1. Sintering process is different. RBSiC is to infiltrate free Si into silicon carbide at a low temperature, SSiC is formed by natural shrinkage at 2100 degrees.

2. SSiC have smoother surface, higher density and higher strength, for some sealings with more strict surface requirements, SSiC will be better.

3. Different used time under different PH and temperature, SSiC is longer than RBSiC

Features of Silicon Carbide 4 Inch Silicon Carbide Wafer Epitaxial Wafer Boat

High purity SiC coated by MOCVD
Superior heat resistance & thermal uniformity
Fine SiC crystal coated for a smooth surface
High durability against chemical cleaning
Material is designed so that cracks and delamination do not occur.

Hot Tags: Silicon, Silicon Wafer, Silicon Carbide, Wafer Boat

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