2 Inch Epi Ready a Plane Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers

Semicorex's RTP Graphite Carrier Plate is the perfect solution for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Our product is designed to offer superior heat resistance and thermal uniformity, ensuring that the epitaxy susceptors are subjected to the deposition environment, with high heat and corrosion resistance.

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Product Description

We know that we only thrive if we can easily guarantee our combined cost competiveness and high-quality advantageous at the same time for 2 Inch Epi Ready a Plane Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers, We sincerely be expecting exchange and cooperation with you. Allow us to move forward hand in hand and accomplish win-win circumstance. 2 Inch Epi Ready a Plane Sapphire Substrates Wafer, Epiready Wafer, Semiconductor Wafer, We have a dedicated and aggressive sales team, and many branches, catering to our customers. We're looking for long-term business partnerships, and ensure our suppliers that they will undoubtedly benefit in both short and long run.

Our product features high-purity SiC-coated graphite, which offers excellent heat distribution properties, ensuring that the SiC-coated carrier has a smooth surface, free from cracks and delamination. Our 2 Inch Epi Ready a Plane Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers is finely silicon carbide coated, ensuring that the surface is smooth and free from any defects. This product is highly durable against harsh chemical cleaning and is designed to ensure that cracks and delamination do not occur.
We offer a price advantage that our competitors cannot match, and we are committed to becoming your long-term partner in China.
With our 2 Inch Epi Ready a Plane Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers, you can be assured of excellent performance, superior heat resistance, and thermal uniformity. The SiC-coated carrier is designed to withstand high temperatures and is highly resistant to chemical cleaning, ensuring that it lasts for many years. Our product is also designed to be easy to use, making it ideal for both new and experienced users.
At Semicorex, we are committed to providing high-quality products and services to our customers. We use only the best materials, and our products are designed to meet the highest standards of quality and performance. Our 2 Inch Epi Ready a Plane Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers is no exception. Contact us today to learn more about how we can help you with your semiconductor wafer processing needs.

Parameters of 2 Inch Epi Ready a Plane Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of 2 Inch Epi Ready a Plane Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers

High purity SiC coated graphite
Superior heat resistance & thermal uniformity
Fine SiC crystal coated for a smooth surface
High durability against chemical cleaning
Material is designed so that cracks and delamination do not occur.

Hot Tags: Sapphire Substrates Wafer, Epiready Wafer, Semiconductor Wafer

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