2 Inch Epi Ready Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers

Semicorex is a leading supplier and manufacturer of MOCVD Susceptor for Epitaxial Growth. Our product is widely used in semiconductor industries, particularly in the growth of the epitaxial layer on the wafer chip. Our susceptor is designed to be used as the center plate in MOCVD, with a gear or ring-shaped design. The product has high heat and corrosion resistance, making it stable in extreme environments.

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Product Description

continue on to improve, to be sure product or service high quality in line with market and consumer standard prerequisites. Our firm has a high-quality assurance program are established for 2 Inch Epi Ready Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers, To supply prospects with superb equipment and providers, and constantly build new machine is our company's organization objectives. We look ahead for your cooperation. 2 Inch Epi Ready Sapphire Substrates Wafer, Epiready Wafer, Semiconductor Wafer, Our products are exported worldwide. Our customers are always satisfied with our reliable quality, customer-oriented services and competitive prices. Our mission is "to continue to earn your loyalty by dedicating our efforts to the constant improvement of our items and services in order to ensure the satisfaction of our end-users, customers, employees, suppliers and the worldwide communities in which we cooperate".

One of advantages of our 2 Inch Epi Ready Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers is its ability to ensure coating on all surface, avoiding peeling off. The product has high-temperature oxidation resistance, which ensures stability at high temperatures up to 1600°C. The high purity of our product is achieved through CVD chemical vapor deposition under high-temperature chlorination conditions. The dense surface with fine particles ensures that the product is highly resistant to corrosion from acid, alkali, salt, and organic reagents.
Our 2 Inch Epi Ready Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.
Contact us today to learn more about our 2 Inch Epi Ready Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers.

Parameters of 2 Inch Epi Ready Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of 2 Inch Epi Ready Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers

- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion

Hot Tags: Sapphire Substrates Wafer, Epiready Wafer, Semiconductor Wafer

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