2 Inch Epi Ready M Plane Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers

Semicorex RTP Carrier for MOCVD Epitaxial Growth is ideal for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Carbon graphite susceptors and quartz crucibles are processed by MOCVD on the surface of graphite, ceramics, etc. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

We try for excellence, company the customers", hopes to be the best cooperation workforce and dominator enterprise for personnel, suppliers and clients, realizes value share and steady marketing for 2 Inch Epi Ready M Plane Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers, The concept of our corporation is "Sincerity, Speed, Services, and Satisfaction". We're going to follow this concept and get more and additional customers' fulfillment. 2 Inch Epi Ready M Plane Sapphire Substrates Wafer, Epiready Wafer, Semiconductor Wafer, Now, we professionally supplies customers with our main products And our business is not only the "buy" and "sell", but also focus on more. We target to be your loyal supplier and long-term cooperator in China. Now, We hope to be the friends with you.

Semicorex supplies 2 Inch Epi Ready M Plane Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers used to support wafers, which is really stable for RTA, RTP or harsh chemical cleaning. At the core of the process, the epitaxy susceptors, are first subjected to the deposition environment, so it has high heat and corrosion resistance. The SiC coated carrier also has a high thermal conductivity, and excellent heat distribution properties.
Our 2 Inch Epi Ready M Plane Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.
Contact us today to learn more about our 2 Inch Epi Ready M Plane Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers.

Parameters of 2 Inch Epi Ready M Plane Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of 2 Inch Epi Ready M Plane Sapphire Substrates Wafers for Growth of GaN Epitaxial Wafers

High purity SiC coated graphite
Superior heat resistance & thermal uniformity
Fine SiC crystal coated for a smooth surface
High durability against chemical cleaning
Material is designed so that cracks and delamination do not occur.

Hot Tags: Sapphire Substrates Wafer, Epiready Wafer, Semiconductor Wafer

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