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China MOCVD Susceptor Manufacturers, Suppliers, Factory

Semicorex graphite center plate or MOCVD susceptor is high purity silicon carbide coated by chemical vapor deposition(CVD) method, using in the process to grow the epitaxial layer on the wafer chip. The SiC coated susceptor is an essential part in the MOCVD, so it demands a superior heat and chemical resistance, as well as high thermal uniformity. We engineered specifically for these demanding epitaxy equipment applications.





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SiC Coated Plate Carriers for MOCVD

SiC Coated Plate Carriers for MOCVD

Semicorex SiC Coated Plate Carriers for MOCVD is a high-quality carrier designed for use in the semiconductor manufacturing process. Its high purity, excellent corrosion resistance, and even thermal profile make it an excellent choice for those looking for a carrier that can withstand the demands of the semiconductor manufacturing process.

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MOCVD Planet Susceptor for Semiconductor

MOCVD Planet Susceptor for Semiconductor

Semicorex is a trusted name in the semiconductor industry, providing high-quality MOCVD Planet Susceptor for Semiconductor. Our product is designed to meet the specific needs of semiconductor manufacturers looking for a carrier that can deliver excellent performance, stability, and durability. Contact us today to learn more about our product and how we can help you with your semiconductor manufacturing needs.

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MOCVD Satellite Holder Plate

MOCVD Satellite Holder Plate

Semicorex MOCVD Satellite Holder Plate is an outstanding carrier designed for use in the semiconductor industry. Its high purity, excellent corrosion resistance, and even thermal profile make it an excellent choice for those looking for a carrier that can withstand the demands of the semiconductor manufacturing process. We are committed to providing our customers with high-quality products that meet their specific requirements. Contact us today to learn more about our MOCVD Satellite Holder Plate and how we can help you with your semiconductor manufacturing needs.

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SiC Coating Graphite Substrate Wafer Carriers for MOCVD

SiC Coating Graphite Substrate Wafer Carriers for MOCVD

You can rest assured to buy SiC Coating Graphite Substrate Wafer Carriers for MOCVD from our factory. At Semicorex, we are a large-scale manufacturer and supplier of SiC Coated Graphite Susceptor in China. Our product has a good price advantage and covers many of the European and American markets. We strive to provide our customers with high-quality products that meet their specific requirements. Our SiC Coating Graphite Substrate Wafer Carrier for MOCVD is an excellent choice for those looking for a high-performance carrier for their semiconductor manufacturing process.

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SiC Coated Graphite Base Susceptors for MOCVD

SiC Coated Graphite Base Susceptors for MOCVD

Semicorex SiC Coated Graphite Base Susceptors for MOCVD are superior quality carriers used in the semiconductor industry. Our product is designed with high-quality silicon carbide that provide excellent performance and long-lasting durability. This carrier is ideal for use in the process of growing an epitaxial layer on the wafer chip.

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Susceptors for MOCVD Reactors

Susceptors for MOCVD Reactors

Semicorex's Susceptors for MOCVD Reactors are high-quality products used in the semiconductor industry for various applications such as silicon carbide layers and epitaxy semiconductor. Our product is available in gear or ring shape and is designed to achieve high-temperature oxidation resistance, making it stable at temperatures up to 1600°C.

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Semicorex has been producing MOCVD Susceptor for many years and is one of the professional MOCVD Susceptor manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.
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