Ga2O3 Epitaxy

Step into a new era of semiconductor excellence with Semicorex Ga2O3 Epitaxy, a groundbreaking solution that redefines the boundaries of power and efficiency. Engineered with precision and innovation, Ga2O3 epitaxy offers a platform for next-generation devices, promising unmatched performance across various applications.

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Product Description

Ga2O3 epitaxy, derived from the fourth-generation wide-bandgap semiconductor, introduces a new level of performance stability and reliability in extreme environments. Its wide-bandgap nature positions it as a material of choice for high-temperature and high-radiation applications.

High-Breakdown Field Strength: Benefit from Ga2O3's exceptional breakdown field strength and elevated Baliga values, making it an unrivaled material for high-voltage and high-power applications. Ga2O3 epitaxy ensures heightened reliability and minimal power losses.

Ga2O3 epitaxy stands out with its superior power efficiency. Boasting Baliga values four times that of GaN and ten times that of SiC, it presents excellent conduction characteristics. Ga2O3 epitaxy devices exhibit power losses merely at 1/7th of SiC and an impressive 1/49th of silicon-based devices.

Ga2O3 epitaxy's lower hardness simplifies the fabrication process, resulting in reduced processing costs. This advantage positions Ga2O3 epitaxy as a cost-effective and scalable solution for a range of applications.