Semicorex Edge Rings are trusted by leading semiconductor fabs and OEMs worldwide. With strict quality control, advanced manufacturing processes, and application-driven design, Semicorex provides solutions that extend tool life, optimize wafer uniformity, and support advanced process nodes.*
Semicorex Edge Rings are a critical part of the full semiconductor manufacturing process, particularly for wafer processing applications including plasma etching and chemical vapor deposition (CVD). Edge Rings are designed to surround the outer perimeter of a semiconductor wafer in order to distribute energy uniformly while improving process stability, wafer yield, and device reliability. Our Edge Rings are made from high-purity Chemical Vapor Deposition silicon carbide (CVD SiC) and are built for demanding process environments.
Issues arise during plasma-based processes where energy non-uniformity and plasma distortion at the edge of the wafer creates risk for defects, process drift, or yield loss. Edge Rings minimize this risk by focusing and shaping the energy field around the outer perimeter of the wafer. Edge Rings sit just outside the outer edge of the wafer and act as process barriers and energy guides that minimize edge effects, protect the wafer edge from over-etching, and deliver essential additional uniformity across the wafer surface.
Material Benefits of CVD SiC:
Our edge rings are manufactured from high-purity CVD SiC, which is uniquely designed and engineered for harsh process environments. CVD SiC is characterized by exceptional thermal conductivity, high mechanical strength, and excellent chemical resistance—all attributes that make CVD SiC the material of choice for semiconductor applications requiring durability, stability, and low contamination issues.
High Purity: CVD SiC has near-zero impurities meaning there will be little to no particles generated and no metal contamination which is vital in advanced node semiconductors.
Thermal Stability: The material maintains dimensional stability at elevated temperatures, which is crucial for proper wafer placement in its plasma position.
Chemical Inertness: It is inert to corrosive gases such as those containing fluorine or chlorine which are commonly used in a plasma etch environment as well as CVD processes.
Mechanical Strength: CVD SiC can withstand cracking and erosion over extended cycle time periods ensuring maximum life and minimizing maintenance costs.
Each Edge Ring is custom engineered to accommodate the geometric dimensions of the process chamber and the size of the wafer; typically 200mm or 300mm. The design tolerances are taken very tightly to ensure the Edge Ring can be utilized in the existing process module with no need for modification. Custom geometries and surface finishes are available to fulfill unique OEM requirements or tool configurations.