Silicon Carbide Epitaxial Wafer Supplier 4h Sic Epi Wafer

Semicorex is a trusted name in the semiconductor industry, providing high-quality MOCVD Planet Susceptor for Semiconductor. Our product is designed to meet the specific needs of semiconductor manufacturers looking for a carrier that can deliver excellent performance, stability, and durability. Contact us today to learn more about our product and how we can help you with your semiconductor manufacturing needs.

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Product Description

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Our Silicon Carbide Epitaxial Wafer Supplier 4h Sic Epi Wafer features high temperature oxidation resistance, ensuring its stability at high temperatures up to 1600°C. It is also highly pure, made by CVD chemical vapor deposition under high-temperature chlorination conditions, ensuring the uniformity and consistency of the product, even thermal profile and laminar gas flow pattern.
Contact us today to learn more about our Silicon Carbide Epitaxial Wafer Supplier 4h Sic Epi Wafer.

Parameters of Silicon Carbide Epitaxial Wafer Supplier 4h Sic Epi Wafer

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of SiC Coated Graphite Susceptor for MOCVD

- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion

Hot Tags: Sic Epi Wafer Supplier, Silicon Carbide Substrate

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