Sic Ceramic Substrate /Plates

Semicorex MOCVD Satellite Holder Plate is an outstanding carrier designed for use in the semiconductor industry. Its high purity, excellent corrosion resistance, and even thermal profile make it an excellent choice for those looking for a carrier that can withstand the demands of the semiconductor manufacturing process. We are committed to providing our customers with high-quality products that meet their specific requirements. Contact us today to learn more about our MOCVD Satellite Holder Plate and how we can help you with your semiconductor manufacturing needs.

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Product Description

We always think and practice corresponding to the change of circumstance, and grow up. We aim at the achievement of a richer mind and body and the living for Sic Ceramic Substrate Plates, We look forward to providing you with our goods while in the in close proximity to long term, and you will discover our quotation is extremely realistic as well as high-quality of our solutions is incredibly outstanding! Sic Ceramic Substrate Plates Silicon Carbide Ceramic, Silicon Carbide Ceramic for LED-TV, Excellent Thermal Silicon Carbide Ceramic, We are proud to supply our items to every costumer all around the world with our flexible, fast efficient services and strictest quality control standard which has always approved and praised by customers.

Semicorex Sic Ceramic Substrate /Plates is a high-quality carrier designed for use in the semiconductor industry. Our product is coated with a high-purity silicon carbide on graphite, making it highly resistant to oxidation at high temperatures of up to 1600°C. The CVD chemical vapor deposition process used in its manufacturing ensures high purity and excellent corrosion resistance, making it ideal for use in cleanroom environments.
The features of our Sic Ceramic Substrate /Plates are impressive. Its dense surface and fine particles enhance its corrosion resistance, making it resistant to acid, alkali, salt, and organic reagents. This carrier is highly stable, even in extreme environments, making it an excellent choice for those looking for a carrier that can withstand the demands of the semiconductor industry.

Parameters of Sic Ceramic Substrate /Plates

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of SiC Coated Graphite Susceptor for MOCVD

- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion

Hot Tags: Silicon Carbide Ceramic, Silicon Carbide Ceramic for LED-TV, Excellent Thermal Silicon Carbide Ceramic

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