Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Epitaxial Wafer Boat has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
Semicorex High Purity Clear Quartz Glass Boat Wafer Carrier for Diffusion, the perfect solution for wafer processing in semiconductor manufacturing. Our High Purity Clear Quartz Glass Boat Wafer Carrier for Diffusions are made from high-quality silicon carbide (SiC) ceramic that provides superior resistance to high temperatures and chemical corrosion.
Our silicon carbide High Purity Clear Quartz Glass Boat Wafer Carrier for Diffusion has a smooth surface that minimizes particle generation, ensuring the highest level of purity for your products. With excellent thermal conductivity and superior mechanical strength, our boats provide consistent and reliable results.
Our High Purity Clear Quartz Glass Boat Wafer Carrier for Diffusions are compatible with all standard wafer processing equipment and can withstand temperatures up to 1600°C. They are easy to handle and clean, making them a cost-effective and efficient choice for your manufacturing needs.
Our team of experts is committed to providing the best quality and service. We offer custom designs to meet your specific requirements, and our products are backed by our quality assurance program.
Parameters of High Purity Clear Quartz Glass Boat Wafer Carrier for Diffusion
Technical Properties |
||||
Index |
Unit |
Value |
||
Material Name |
Reaction Sintered Silicon Carbide |
Pressureless Sintered Silicon Carbide |
Recrystallized Silicon Carbide |
|
Composition |
RBSiC |
SSiC |
R-SiC |
|
Bulk Density |
g/cm3 |
3 |
3.15 ± 0.03 |
2.60-2.70 |
Flexural Strength |
MPa (kpsi) |
338(49) |
380(55) |
80-90 (20°C) 90-100(1400°C) |
Compressive Strength |
MPa (kpsi) |
1120(158) |
3970(560) |
> 600 |
Hardness |
Knoop |
2700 |
2800 |
/ |
Breaking Tenacity |
MPa m1/2 |
4.5 |
4 |
/ |
Thermal Conductivity |
W/m.k |
95 |
120 |
23 |
Coefficient of Thermal Expansion |
10-6.1/°C |
5 |
4 |
4.7 |
Specific Heat |
Joule/g 0k |
0.8 |
0.67 |
/ |
Max temperature in air |
℃ |
1200 |
1500 |
1600 |
Elastic Modulus |
Gpa |
360 |
410 |
240 |
The difference between SSiC and RBSiC:
1. Sintering process is different. RBSiC is to infiltrate free Si into silicon carbide at a low temperature, SSiC is formed by natural shrinkage at 2100 degrees.
2. SSiC have smoother surface, higher density and higher strength, for some sealings with more strict surface requirements, SSiC will be better.
3. Different used time under different PH and temperature, SSiC is longer than RBSiC
Features of Silicon Carbide High Purity Clear Quartz Glass Boat Wafer Carrier for Diffusion
High purity SiC coated by MOCVD
Superior heat resistance & thermal uniformity
Fine SiC crystal coated for a smooth surface
High durability against chemical cleaning
Material is designed so that cracks and delamination do not occur.