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Oxidation Process

The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form a......

Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This mak......

How to do CMP Process

In the process of silicon wafer manufacturing, after the crystal rod is cut into silicon wafers, it will need to be polished and cleaned to obtain a single crystal silicon wafer like a mirror.

What is CMP Process

In semiconductor manufacturing, atomic-level flatness is usually used to describe the global flatness of the wafer, with the unit of nanometers (nm).

What are the Pros and Cons of Dry Etching and Wet Etching?

Etching is an essential process in semiconductor manufacturing. This process can be categorized into two types: dry etching and wet etching. Each technique has its own advantages and limitations, making it crucial to understand the differences between them. So, how do you choose the best etching met......

Core Material for SiC Growth: Tantalum Carbide Coating

The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

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