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Demystifying Electrostatic Chuck (ESC) Technology in Wafer Handling

Electrostatic chucks (ESCs) have become indispensable in semiconductor manufacturing and flat panel display production, offering a damage-free, highly controllable method for holding and positioning delicate wafers and substrates during critical processing steps. This article delves into the intrica......

Thin film growth process

Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

Heteroepitaxy of 3C-SiC: An Overview

The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for......

High-Purity CVD Thick SiC: Process Insights for Material Growth

Thick, high-purity silicon carbide (SiC) layers, typically exceeding 1mm, are critical components in various high-value applications, including semiconductor fabrication and aerospace technologies. This article delves into the Chemical Vapor Deposition (CVD) process for producing such layers, highli......

Monocrystalline silicon vs. polycrystalline silicon

Single crystal silicon and polycrystalline silicon each have their own unique advantages and applicable scenarios. Single crystal silicon is suitable for high-performance electronic products and microelectronics due to its excellent electrical and mechanical properties. Polycrystalline silicon, on t......

Substrate and Epitaxy

In the process of wafer preparation, there are two core links: one is the preparation of the substrate, and the other is the implementation of the epitaxial process. The substrate, a wafer carefully made of semiconductor single crystal material, can be directly put into the wafer manufacturing proce......

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