Semicorex solid SiC focus rings are the indispensable ceramic ring parts precisely fabricated from high-performance CVD SiC materials, which are designed for high-intensity plasma etching applications in the advanced semiconductor industry. Partnering with Semicorex means you can enjoy the ideal CVD SiC solutions to achieve optimal etching effects.
During plasma etching processes, variations of RF field, ion energy, radical transport and heat distribution tend to occur on the wafer edge. This renders the edge region susceptible to issues including etch rate fluctuation, critical dimension shift, profile distortion, edge defects and yield loss. For advanced memory and logic chip fabrication, minor deviations at the wafer edge will exert amplified impacts on the process performance across the entire wafer. For this reason, focus rings are widely adopted in industry. Placed around the wafer within etching chambers, focus rings can precisely confine the plasma coverage and shield wafer edges from over-etching, which substantially improves overall process uniformity and production yield.
Different from conventional quartz focus rings with limited plasma erosion resistance and silicon focus rings that suffer rapid consumption under intensive etching, Semicorex solid SiC focus rings, manufactured from CVD-grown silicon carbide, feature a fully dense and binder-free internal structure and deliver multiple excellent material properties listed as below:
A. Higher material purity (ppb level) and lower impurity content
B. Dense material structure and lower porosity
C. Lower degassing level
D. Better thermal stability
E. Harder material hardness and superior wear resistance
F. More stable corrosion resistance
|
Item |
Unit |
SMX-SIC-Ⅰ |
SMX-SIC-Ⅱ |
SMX-SIC-Ⅲ |
|
Density |
g/cm³ |
3.21 |
3.21 |
3.21 |
|
Flexural Strength @25°C |
MPa |
380 |
530 |
480 |
|
Tensile Strength @25°C |
MPa |
294 |
/ | - |
|
Young’s Modulus @25°C |
GPa |
480 |
440 |
480 |
|
Hardness (HK) |
HK |
3200 |
/ | - |
|
Hardness (HV) |
HV |
2800 |
3000 |
2900 |
|
Coefficient of Thermal Expansion (RT ~ 1000°C) |
1/K |
4.3×10⁻⁶ |
4.3×10⁻⁶ |
4.6×10⁻⁶ |
|
Thermal Conductivity (Through-plane) |
W/(m·K) |
/ |
260 |
230 |
|
Thermal Conductivity (In-plane) |
W/(m·K) |
280 |
235 |
220 |
|
Specific Heat Capacity |
J/(g·K) |
0.63 |
0.66 |
0.66 |
|
Resistivity |
Ω·cm |
≥10⁶ |
≤10² |
≤10⁰ |
The above data is for reference only.
Backed with the integrated production lines and its professional technical team, Semicorex delivers solid technical expertise and experienced processing capabilities. We can tailor our solid SiC focus rings based on customers’ technical drawings to achieve micron-level dimensional control, refined surface treatment, tight thickness uniformity control, thorough surface defect management and dependable internal stress regulation, thus ensuring perfect compatibility with customers’ etching systems.