SiC-Coated Graphite Wafer Carriers

In semiconductor wafer fabrication, an eptaxial layer needs to be grown on the wafer substrate so that semiconductor devices can be manufactured in subsequent steps. As the indispensable consumable component in the wafer epitaxial process that directly contacts the wafer substrate, the performance of SiC-coated graphite wafer carriers exerts a significant impact on the uniformity and purity of the epitaxial material growth. For this reason, it’s crucial for users to choose an optimal SiC-coated graphite wafer carrier.

Adopting high-purity graphite to manufacture the base of wafer carriers and employing a uniform CVD SiC coating to give the wafer carrier "protective armor," Semicorex is dedicated to offering a high-quality SiC-coated graphite wafer carrier that is able to provide reliable structural support for wafer substrates in challenging epitaxial processes, thereby ensuring stable and reliable growth of epitaxial materials.

1. Premium graphite base

A. The graphite base has superior thermal conductivity, which enables quick and even heat distribution during epitaxial processes.

B. Featuring a relatively low coefficient of thermal expansion, the graphite base can ensure our SiC-coated graphite wafer carriers withstand frequent thermal cycles without easily deforming.

C. Graphite materials boast excellent mechanical strength, so our SiC-coated graphite wafer carriers are able to securely support wafer substrates during long-term epitaxy applications.

2. Dependable CVD SiC Coating

A. Ultra-high cleanliness

The purity of CVD SiC coating can reach the ppb level, which minimizes the contamination between the wafer carrier and the wafer substrate, thus fully satisfying the stringent cleanliness requirements of the semiconductor industry.

B. Reliable protection

The CVD SiC coating features a dense structure and is able to completely isolate the graphite base from high-temperature and high-corrosive environments and effectively inhibit the chemical corrosion and oxidation of the graphite base, thus ensuring the reliable operation of our SiC-coated graphite wafer carrier in long-term service.

C. Strong bonding strength

The CVD SiC coating delivers exceptional thermal conductivity and a similar thermal expansion to the graphite base. It exhibits strong bonding strength with the graphite base and is less prone to cracking or peeling even under dramatic temperature changes.